EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON
Keywords:
Semiconductors, strain gauge, deep levels, strain gauge effect, strain potential, compensated silicon, manganese concentration, temperature, semiconductorsAbstract
In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature.
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